Interplay of stress, structure, and stoichiometry in Ge-covered Si(001).
نویسندگان
چکیده
By calculating the evolution of surface energies and surface stress tensors of Ge-covered Si(001) with increasing Ge coverage, we derive the most probable Ge stoichiometry in the subsurface regions beyond 1 monolayer coverage. We compare the calculated surface reconstruction and surface stress at the thermodynamic and kinetic limits to experiment to provide a quantitative understanding of the recently observed Ge-induced reversal of surface stress anisotropy. [S0031-9007(96)00004-X]
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عنوان ژورنال:
- Physical review letters
دوره 76 17 شماره
صفحات -
تاریخ انتشار 1996